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WebMay 24, 2000 · Abstract: Charge control during ion implantation depends on the interaction of the ion beam plasma with the device wafer and other local sources of charged … WebIon Beam Etching. The ion beam etching (IBE) is a physical dry etch process. Thereby argon ions are radiated onto the surface as an ion beam with about 1 to 3 keV. Because of the energy of the ions, they strike out material of the surface. The wafer is held perpendicular or tilted into the ion beam, the etch progress is absolute anisotropic. ches exam scoring
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